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HGTD7N60C3S9A Tech Specifications

IGBT 600V 14A 60W TO252AA

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -40°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 60W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation 60W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 14A
Collector Emitter Breakdown Voltage 600V
Turn On Time 20 ns
Turn Off Time-Nom (toff) 490 ns
Current - Collector Pulsed (Icm) 56A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Terminal Form GULL WING
Current Rating 14A
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
JEDEC-95 Code TO-252AA
Collector Emitter Saturation Voltage 1.6V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A
Gate Charge 23nC
Switching Energy 165μJ (on), 600μJ (off)
RoHS Status ROHS3 Compliant
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HGTD7N60C3S9A Documents

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