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HGTG10N120BND Tech Specifications

HGTG10N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Current Rating 35A
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 70 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Height 20.82mm
Width 4.82mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 298W
Number of Elements 1
Power Dissipation 298W
Turn On Delay Time 23 ns
Rise Time 165ns
Turn-Off Delay Time 165 ns
Max Collector Current 35A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.45V
Test Condition 960V, 10A, 10 Ω, 15V
Continuous Collector Current 35A
IGBT Type NPT
Current - Collector Pulsed (Icm) 80A
Switching Energy 850μJ (on), 800μJ (off)
Length 15.87mm
Radiation Hardening No
Lead Free Lead Free
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HGTG10N120BND Documents

Download datasheets and manufacturer documentation for HGTG10N120BND

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