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HGTG20N60A4D Tech Specifications

HGTG20N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 70A
Number of Elements 1
Power Dissipation 290W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 35 ns
Collector Emitter Saturation Voltage 1.8V
Turn On Time 28 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Gate Charge 142nC
Td (on/off) @ 25°C 15ns/73ns
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 290W
Base Part Number HGTG20N60
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 15 ns
Rise Time 12ns
Turn-Off Delay Time 73 ns
Max Collector Current 70A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 390V, 20A, 3 Ω, 15V
Turn Off Time-Nom (toff) 160 ns
Current - Collector Pulsed (Icm) 280A
Switching Energy 105μJ (on), 150μJ (off)
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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HGTG20N60A4D Documents

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