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HGTG30N60A4D Tech Specifications

HGTG30N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 30A
Number of Elements 1
Power Dissipation 463W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 55ns
Collector Emitter Saturation Voltage 1.8V
Test Condition 390V, 30A, 3 Ω, 15V
Turn Off Time-Nom (toff) 238 ns
Current - Collector Pulsed (Icm) 240A
Switching Energy 280μJ (on), 240μJ (off)
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2016
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 463W
Base Part Number HGTG30N60
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 25 ns
Rise Time 12s
Turn-Off Delay Time 150 ns
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Turn On Time 35 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Gate Charge 225nC
Td (on/off) @ 25°C 25ns/150ns
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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HGTG30N60A4D Documents

Download datasheets and manufacturer documentation for HGTG30N60A4D

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