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HGTG40N60B3 Tech Specifications

HGTG40N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 290W
Number of Elements 1
Power Dissipation 290W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 170 ns
Max Collector Current 70A
Collector Emitter Saturation Voltage 1.4V
Turn On Time 82 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Gate Charge 250nC
Td (on/off) @ 25°C 47ns/170ns
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 70A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 47 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 480V, 40A, 3 Ω, 15V
Turn Off Time-Nom (toff) 385 ns
Current - Collector Pulsed (Icm) 330A
Switching Energy 1.05mJ (on), 800μJ (off)
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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HGTG40N60B3 Documents

Download datasheets and manufacturer documentation for HGTG40N60B3

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