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HGTG7N60A4D Tech Specifications

HGTG7N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 125W
Number of Elements 1
Power Dissipation 125W
Input Type Standard
Rise Time 11ns
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 22 ns
Collector Emitter Saturation Voltage 1.9V
Test Condition 390V, 7A, 25 Ω, 15V
Turn Off Time-Nom (toff) 205 ns
Current - Collector Pulsed (Icm) 56A
Switching Energy 55μJ (on), 60μJ (off)
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 34A
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 34A
Collector Emitter Breakdown Voltage 600V
Turn On Time 17 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Gate Charge 37nC
Td (on/off) @ 25°C 11ns/100ns
Radiation Hardening No
Lead Free Lead Free
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