HGTP3N60A4D Tech Specifications

HGTP3N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 36 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 17A
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 17A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2V
Test Condition 390V, 3A, 50 Ω, 15V
Turn Off Time-Nom (toff) 180 ns
Current - Collector Pulsed (Icm) 40A
Switching Energy 37μJ (on), 25μJ (off)
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Max Power Dissipation 70W
Number of Elements 1
Power Dissipation 70W
Input Type Standard
Rise Time 11ns
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 19 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 17.5 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Gate Charge 21nC
Td (on/off) @ 25°C 6ns/73ns
Radiation Hardening No
Lead Free Lead Free
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HGTP3N60A4D Documents

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