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HGTP7N60B3D Tech Specifications

HGTP7N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 60W
Base Part Number HGTP7N60
Power Dissipation 60W
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 37ns
Collector Emitter Saturation Voltage 1.8V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
Current - Collector Pulsed (Icm) 56A
Switching Energy 160μJ (on), 120μJ (off)
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Voltage - Rated DC 600V
Current Rating 14A
Element Configuration Single
Input Type Standard
Max Collector Current 14A
Collector Emitter Breakdown Voltage 600V
Test Condition 480V, 7A, 50 Ω, 15V
Gate Charge 23nC
Td (on/off) @ 25°C 26ns/130ns
RoHS Status RoHS Compliant
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HGTP7N60B3D Documents

Download datasheets and manufacturer documentation for HGTP7N60B3D

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