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HGTP7N60C3D Tech Specifications

HGTP7N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-220-3
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 60W
Base Part Number HGTP7N60
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 8.5 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.6V
Test Condition 480V, 7A, 50 Ω, 15V
Turn Off Time-Nom (toff) 490 ns
Current - Collector Pulsed (Icm) 56A
Height 9.02mm
Width 4.57mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Part Status Obsolete
Number of Terminations 3
Min Operating Temperature -40°C
Voltage - Rated DC 600V
Current Rating 14A
Number of Elements 1
Power Dissipation 60W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 350 ns
Max Collector Current 14A
Collector Emitter Breakdown Voltage 600V
Turn On Time 20 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A
Gate Charge 23nC
Switching Energy 165μJ (on), 600μJ (off)
Length 10.28mm
Radiation Hardening No
RoHS Status RoHS Compliant
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