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KSA1182YMTF Tech Specifications

KSA1182YMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 30mg
Operating Temperature 150°C TJ
Published 2008
Part Status Obsolete
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Form GULL WING
Frequency 200MHz
Number of Elements 1
Power Dissipation 150mW
Gain Bandwidth Product 200MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage -100mV
Collector Base Voltage (VCBO) -35V
hFE Min 70
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -30V
Terminal Position DUAL
Current Rating -500mA
Base Part Number KSA1182
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 200MHz
Max Breakdown Voltage 30V
Emitter Base Voltage (VEBO) -5V
Radiation Hardening No
Lead Free Lead Free
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KSA1182YMTF Documents

Download datasheets and manufacturer documentation for KSA1182YMTF

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