MBD770DWT1G Tech Specifications

MBD770DWT1G datasheet pdf and Diodes - RF product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / RF Diodes
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Rectifier Diodes
Terminal Form GULL WING
Current Rating 90mA
Base Part Number MBD770
Reference Standard AEC-Q101
Max Current Rating 100mA
Element Configuration Dual
Power Dissipation 120mW
Max Reverse Leakage Current 200nA
Forward Voltage 1V
Max Repetitive Reverse Voltage (Vrrm) 70V
Max Forward Surge Current (Ifsm) 1A
Diode Capacitance-Max 1pF
Length 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC 70V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 2
Power Dissipation-Max 380mW
Diode Type Schottky - 2 Independent
Forward Current 100mA
Halogen Free Halogen Free
Peak Reverse Current 200nA
Capacitance @ Vr, F 1pF @ 20V 1MHz
Frequency Band ULTRA HIGH FREQUENCY
Height 1mm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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MBD770DWT1G Documents

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Others include   "MBD77"   parts

The following parts include  'MBD77' 

Part # Manufacturer Category Availability
MBD770DWT1G AMI Semiconductor / ON Semiconductor Diodes - RF 18340

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