MBR1H100SFT3G Tech Specifications

MBR1H100SFT3G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single-Phase Diode Rectifier
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Contact Plating Tin
Package / Case SOD-123F
Number of Pins 2
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Max Operating Temperature 175°C
Additional Feature FREE WHEELING DIODE
Subcategory Rectifier Diodes
Terminal Form FLAT
Pin Count 2
Element Configuration Single
Diode Type Schottky
Voltage - Forward (Vf) (Max) @ If 760mV @ 1A
Operating Temperature - Junction -65°C~175°C
Halogen Free Halogen Free
Max Reverse Voltage (DC) 100V
Peak Reverse Current 40μA
Peak Non-Repetitive Surge Current 50A
Height 900μm
Width 1.8mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Position DUAL
Base Part Number MBR1H100
Number of Elements 1
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 40μA @ 100V
Forward Current 1A
Output Current-Max 1A
Forward Voltage 840mV
Average Rectified Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Max Forward Surge Current (Ifsm) 50A
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MBR1H100SFT3G Documents

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MBR1H100SFT3G AMI Semiconductor / ON Semiconductor Diodes - Rectifiers - Single 200250

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