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MBR30H100MFST1G Tech Specifications

MBR30H100MFST1G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single-Phase Diode Rectifier
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory Rectifier Diodes
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Element Configuration Single
Diode Type Schottky
Voltage - Forward (Vf) (Max) @ If 900mV @ 30A
Forward Current 30A
Application EFFICIENCY
Max Reverse Voltage (DC) 100V
Number of Phases 1
Max Repetitive Reverse Voltage (Vrrm) 100V
Max Forward Surge Current (Ifsm) 300A
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 hours ago)
Mounting Type Surface Mount
Diode Element Material SILICON
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100μA @ 100V
Case Connection CATHODE
Operating Temperature - Junction -55°C~150°C
Forward Voltage 900mV
Average Rectified Current 30A
Peak Reverse Current 15mA
Peak Non-Repetitive Surge Current 300A
RoHS Status ROHS3 Compliant
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MBR30H100MFST1G Documents

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