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MBRA1H100T3G Tech Specifications

MBRA1H100T3G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single-Phase Diode Rectifier
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case DO-214AC, SMA
Number of Pins 2
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Max Operating Temperature 175°C
HTS Code 8541.10.00.80
Terminal Form J BEND
Pin Count 2
Element Configuration Single
Diode Type Schottky
Voltage - Forward (Vf) (Max) @ If 760mV @ 1A
Operating Temperature - Junction -65°C~175°C
Halogen Free Halogen Free
Max Reverse Voltage (DC) 100V
Peak Reverse Current 4μA
Peak Non-Repetitive Surge Current 50A
Height 2mm
Width 2.92mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -65°C
Terminal Position DUAL
Base Part Number MBRA1H100
Number of Elements 1
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 40μA @ 100V
Forward Current 1A
Output Current-Max 1A
Forward Voltage 840mV
Average Rectified Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Max Forward Surge Current (Ifsm) 50A
Length 4.57mm
Radiation Hardening No
Lead Free Lead Free
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MBRA1H100T3G Documents

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