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MBRB30H60CTT4G Tech Specifications

MBRB30H60CTT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Rectifier Diode Array
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Packaging Tape & Reel (TR)
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
HTS Code 8541.10.00.80
Terminal Position SINGLE
Base Part Number MBRB30H60CT
JESD-30 Code R-PSSO-G2
Element Configuration Common Cathode
Diode Type Schottky
Voltage - Forward (Vf) (Max) @ If 620mV @ 15A
Max Reverse Leakage Current 300μA
Max Surge Current 260A
Application EFFICIENCY
Forward Voltage 780mV
Average Rectified Current 15A
Peak Reverse Current 300μA
Peak Non-Repetitive Surge Current 260A
Max Forward Surge Current (Ifsm) 260A
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Max Operating Temperature 175°C
Additional Feature LOW POWER LOSS
Subcategory Rectifier Diodes
Terminal Form GULL WING
Pin Count 3
Number of Elements 2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 300μA @ 60V
Forward Current 15A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 7.5A
Halogen Free Halogen Free
Max Reverse Voltage (DC) 60V
Number of Phases 1
Max Repetitive Reverse Voltage (Vrrm) 60V
Diode Configuration 1 Pair Common Cathode
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MBRB30H60CTT4G Documents

Download datasheets and manufacturer documentation for MBRB30H60CTT4G

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