MBRD660CTRLG Tech Specifications

MBRD660CTRLG datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Rectifier Diode Array
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Packaging Tape & Reel (TR)
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Position SINGLE
Current Rating 6A
Pin Count 3
Number of Elements 2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100μA @ 60V
Forward Current 6A
Output Current-Max 3A
Halogen Free Halogen Free
Max Reverse Voltage (DC) 60V
Number of Phases 1
Max Repetitive Reverse Voltage (Vrrm) 60V
Diode Configuration 1 Pair Common Cathode
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Max Operating Temperature 175°C
Additional Feature FREE WHEELING DIODE
Voltage - Rated DC 60V
Terminal Form GULL WING
Base Part Number MBRD660CT
JESD-30 Code R-PSSO-G2
Element Configuration Common Cathode
Diode Type Schottky
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Operating Temperature - Junction -65°C~175°C
Application FAST RECOVERY POWER
Forward Voltage 900mV
Average Rectified Current 3A
Peak Reverse Current 100μA
Peak Non-Repetitive Surge Current 75A
Max Forward Surge Current (Ifsm) 75A
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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