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MBT3946DW1T2G Tech Specifications

TRANS NPN/PNP 40V 0.2A SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 40V
Terminal Form GULL WING
Current Rating 200mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Polarity NPN, PNP
Power Dissipation 150mW
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 300MHz 250MHz
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 70ns
Length 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number MBT3946D
Number of Elements 2
Element Configuration Dual
Transistor Application AMPLIFIER
Transistor Type NPN, PNP
Max Collector Current 200mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
hFE Min 40
Height 1mm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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