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MBT6429DW1T1G Tech Specifications

TRANS 2NPN 45V 0.2A SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Form GULL WING
Current Rating 200mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Polarity NPN
Power Dissipation 150mW
Gain Bandwidth Product 700MHz
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 6V
Height 1mm
Width 1.35mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
Frequency 700MHz
Base Part Number MBT6429D
Number of Elements 2
Element Configuration Dual
Transistor Application AMPLIFIER
Transistor Type 2 NPN (Dual)
Max Collector Current 200mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 55V
hFE Min 500
Length 2.2mm
Radiation Hardening No
Lead Free Lead Free
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