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MGB15N40CLT4 Tech Specifications

MGB15N40CLT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) 240
Current Rating 15A
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AUTOMOTIVE IGNITION
Collector Emitter Voltage (VCEO) 2.9V
Collector Emitter Breakdown Voltage 440V
Input Capacitance 1nF
Test Condition 300V, 6.5A, 1k Ω
Turn Off Time-Nom (toff) 20500 ns
Td (on/off) @ 25°C -/4μs
Gate-Emitter Thr Voltage-Max 2.1V
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature VOLTAGE CLAMPING
Voltage - Rated DC 410V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation 150W
Input Type Logic
Polarity/Channel Type N-CHANNEL
Max Collector Current 15A
Collector Emitter Saturation Voltage 10V
Turn On Time 6000 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 25A
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 22V
REACH SVHC No SVHC
Lead Free Contains Lead
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MGB15N40CLT4 Documents

Download datasheets and manufacturer documentation for MGB15N40CLT4

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