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MJ11028G Tech Specifications

MJ11028G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e1
Part Status Active
Number of Terminations 2
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 50V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Type NPN - Darlington
Max Collector Current 50A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Continuous Collector Current 50A
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case TO-204AE
Number of Pins 2
Operating Temperature -55°C~200°C TJ
Published 2002
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300W
Terminal Form PIN/PEG
Current Rating 50A
Pin Count 2
Polarity NPN
Power Dissipation 300mW
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A 5V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
Collector Emitter Saturation Voltage 2.5V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJ11028G Documents

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