MJ21194G Tech Specifications

MJ21194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~200°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 250W
Terminal Form PIN/PEG
Frequency 4MHz
Number of Elements 1
Power Dissipation 250W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A 5V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 400V
hFE Min 25
Length 39.37mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 250V
Terminal Position BOTTOM
Current Rating 16A
Pin Count 2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 4MHz
Transistor Type NPN
Max Collector Current 16A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 1.4V
Emitter Base Voltage (VEBO) 5V
Height 8.51mm
Width 26.67mm
REACH SVHC No SVHC
Lead Free Lead Free
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MJ21194G Documents

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