MJ2955G Tech Specifications

MJ2955G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~200°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 115W
Terminal Form PIN/PEG
Current Rating -15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 2.5MHz
Transistor Type PNP
Max Collector Current 15A
Current - Collector Cutoff (Max) 700μA
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V
Emitter Base Voltage (VEBO) 7V
Height 26.67mm
Width 8.509mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 2.5MHz
Base Part Number MJ2955
Number of Elements 1
Power Dissipation 115W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A
Transition Frequency 2.5MHz
Collector Base Voltage (VCBO) 100V
hFE Min 20
Length 39.37mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJ2955G Documents

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