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MJB44H11T4G Tech Specifications

MJB44H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 80V
Terminal Form GULL WING
Current Rating 10A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 50MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
Base Part Number MJB44H11
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 50MHz
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
hFE Min 60
Length 10.29mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJB44H11T4G Documents

Download datasheets and manufacturer documentation for MJB44H11T4G

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