MJB5742T4G Tech Specifications

MJB5742T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 2.000002g
Operating Temperature -65°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 100W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 400V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 4A 5V
Collector Emitter Breakdown Voltage 400V
Max Breakdown Voltage 400V
Continuous Collector Current 8A
Length 10.29mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Base Part Number MJB5742
JESD-30 Code R-PSSO-G2
Polarity NPN
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Max Collector Current 8A
Vce Saturation (Max) @ Ib, Ic 3V @ 400mA, 8A
Collector Emitter Saturation Voltage 2V
Emitter Base Voltage (VEBO) 8V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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MJB5742T4G Documents

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