MJD122T4 Tech Specifications

MJD122T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2005
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 100V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Power Dissipation 20W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 4V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 2V @ 15mA, 4A
Transition Frequency 4MHz
Frequency - Transition 4MHz
Emitter Base Voltage (VEBO) 5V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory Other Transistors
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 240
Current Rating 5A
Base Part Number MJD122
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Type NPN - Darlington
Max Collector Current 8A
Current - Collector Cutoff (Max) 10μA
Collector Emitter Breakdown Voltage 100V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Continuous Collector Current 8A
RoHS Status Non-RoHS Compliant
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MJD122T4 Documents

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