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MJD127T4G Tech Specifications

MJD127T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -100V
Terminal Form GULL WING
Current Rating -8A
Base Part Number MJD127
JESD-30 Code R-PSSO-G2
Polarity PNP
Power Dissipation 20W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Max Collector Current 8A
Current - Collector Cutoff (Max) 10μA
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Frequency - Transition 4MHz
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Transition Frequency 4MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Continuous Collector Current 8A
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJD127T4G Documents

Download datasheets and manufacturer documentation for MJD127T4G

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