MJD41CRLG Tech Specifications

MJD41CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Terminal Form GULL WING
Current Rating 6A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.75W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Transition Frequency 3MHz
Max Breakdown Voltage 100V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 260
Frequency 3MHz
Base Part Number MJD41
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 3MHz
Transistor Type NPN
Max Collector Current 6A
Current - Collector Cutoff (Max) 50μA
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 100V
hFE Min 30
RoHS Status ROHS3 Compliant
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MJD41CRLG Documents

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