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MJD45H11RLG Tech Specifications

MJD45H11RLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -80V
Terminal Form GULL WING
Current Rating -8A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.75W
Transistor Application SWITCHING
Gain Bandwidth Product 90MHz
Transistor Type PNP
Max Collector Current 8A
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
hFE Min 60
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) 260
Frequency 90MHz
Base Part Number MJD45H11
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Halogen Free Halogen Free
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 90MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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MJD45H11RLG Documents

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