MJD5731T4G Tech Specifications

MJD5731T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 1.56W
Peak Reflow Temperature (Cel) 260
Frequency 10MHz
Base Part Number MJD5731
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 10MHz
Transistor Type PNP
Max Collector Current 1A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
hFE Min 30
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -350V
Terminal Form GULL WING
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.56W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 350V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Transition Frequency 10MHz
Max Breakdown Voltage 350V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Width 6.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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MJD5731T4G Documents

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