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MJE13003G Tech Specifications

MJE13003G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 400V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 10MHz
Pin Count 3
Number of Elements 1
Power Dissipation 1.4W
Gain Bandwidth Product 3MHz
Transistor Type NPN
Max Collector Current 1.5A
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 100V
hFE Min 8
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-225AA, TO-126-3
Transistor Element Material SILICON
Packaging Bulk
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.4W
Current Rating 1.5A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 400V
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 500mA 2V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
REACH SVHC No SVHC
Lead Free Lead Free
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MJE13003G Documents

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  • Datasheets

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