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MJE2955T Tech Specifications

MJE2955T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2010
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 75W
Base Part Number MJE2955
Element Configuration Single
Gain Bandwidth Product 2MHz
Collector Emitter Voltage (VCEO) 8V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Max Frequency 2MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
hFE Min 20
Length 10.28mm
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC -60V
Current Rating -10A
Polarity PNP
Power - Max 75W
Transistor Type PNP
Max Collector Current 10A
Current - Collector Cutoff (Max) 700μA
Collector Emitter Breakdown Voltage 400V
Current - Collector (Ic) (Max) 10A
Collector Emitter Saturation Voltage 1.1V
Frequency - Transition 2MHz
Emitter Base Voltage (VEBO) 5V
Height 9.28mm
Width 4.82mm
Lead Free Contains Lead
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MJE2955T Documents

Download datasheets and manufacturer documentation for MJE2955T

  • Datasheets

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