MJE5850G Tech Specifications

MJE5850G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -300V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation 80W
Transistor Application SWITCHING
Transistor Type PNP
Max Collector Current 8A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 300V
Collector Base Voltage (VCBO) 350V
hFE Min 15
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series SWITCHMODE™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 80W
Current Rating -8A
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 300V
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A
Collector Emitter Saturation Voltage 2V
Emitter Base Voltage (VEBO) 6V
Height 6.35mm
Width 6.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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MJE5850G Documents

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