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MJF3055G Tech Specifications

MJF3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) 260
Frequency 2MHz
Pin Count 3
Element Configuration Single
Case Connection ISOLATED
Gain Bandwidth Product 2MHz
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 90V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Width 25.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 30W
Current Rating 10A
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 90V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 3.3A, 10A
Transition Frequency 2MHz
Collector Base Voltage (VCBO) 90V
hFE Min 20
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJF3055G Documents

Download datasheets and manufacturer documentation for MJF3055G

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