MJF6668 Tech Specifications

MJF6668 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2008
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory Other Transistors
Max Power Dissipation 2W
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Polarity PNP
Power Dissipation 40W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 3000 @ 3A 4V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Continuous Collector Current 10A
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Voltage - Rated DC -100V
Peak Reflow Temperature (Cel) 240
Current Rating -10A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Transistor Type PNP - Darlington
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Transition Frequency 20MHz
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
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MJF6668 Documents

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