MJW21193 Tech Specifications

MJW21193 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2007
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 200W
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Current - Collector (Ic) (Max) 16A
Collector Emitter Saturation Voltage 1.4V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC -250V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -16A
Pin Count 3
Number of Elements 1
Case Connection ISOLATED
Gain Bandwidth Product 4MHz
Transistor Type PNP
Max Collector Current 16A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 250V
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 400V
hFE Min 20
Lead Free Contains Lead
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MJW21193 Documents

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