MMBD353LT1G Tech Specifications

MMBD353LT1G datasheet pdf and Diodes - RF product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / RF Diodes
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.10.00.60
Subcategory Microwave Mixer Diodes
Terminal Form GULL WING
Current Rating 80mA
Base Part Number MMBD353
Number of Elements 2
Diode Type Schottky - 1 Pair Series Connection
Forward Current 10mA
Forward Voltage 600mV
Peak Reverse Current 10μA
Capacitance @ Vr, F 1pF @ 0V 1MHz
Max Forward Surge Current (Ifsm) 600mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Capacitance 1pF
Voltage - Rated DC 7V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Dual
Power Dissipation 225mW
Halogen Free Halogen Free
Reverse Recovery Time 5 ns
Max Repetitive Reverse Voltage (Vrrm) 7V
Reverse Voltage 7V
Frequency Band ULTRA HIGH FREQUENCY
REACH SVHC No SVHC
Lead Free Lead Free
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