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MMBD770T1G Tech Specifications

MMBD770T1G datasheet pdf and Diodes - RF product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / RF Diodes
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature -55°C~125°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW REVERSE LEAKAGE
Subcategory Rectifier Diodes
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity Standard
Element Configuration Single
Power Dissipation 120mW
Forward Current 200mA
Max Surge Current 1A
Peak Reverse Current 200nA
Capacitance @ Vr, F 1pF @ 20V 1MHz
Max Forward Surge Current (Ifsm) 1A
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Height 850μm
Width 1.24mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.60
Voltage - Rated DC 70V
Terminal Form GULL WING
Current Rating 1A
Base Part Number MMBD770
Number of Elements 1
Max Current Rating 200mA
Diode Type Schottky - Single
Output Current 200mA
Max Reverse Leakage Current 200nA
Forward Voltage 1V
Max Repetitive Reverse Voltage (Vrrm) 70V
Peak Non-Repetitive Surge Current 1A
Reverse Voltage (DC) 70V
Diode Capacitance-Max 1pF
Length 2.1mm
Radiation Hardening No
Lead Free Lead Free
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MMBD770T1G Documents

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