MMBF2201NT1G Tech Specifications

MMBF2201NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 300mA
Pin Count 3
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2.5 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 1.7 V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 17 hours ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Resistance 1Ohm
Voltage - Rated DC 20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 300mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 5V
Rise Time 2.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Threshold Voltage 1.7V
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MMBF2201NT1G Documents

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