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MMBT2131T1G Tech Specifications

MMBT2131T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC -40V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation 665mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 3V
Vce Saturation (Max) @ Ib, Ic 400mV @ 70mA, 700mA
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 342mW
Terminal Form GULL WING
Current Rating -700mA
Pin Count 6
Element Configuration Single
Power - Max 342mW
Transistor Type PNP
Max Collector Current 700mA
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
hFE Min 150
RoHS Status ROHS3 Compliant
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MMBT2131T1G Documents

Download datasheets and manufacturer documentation for MMBT2131T1G

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