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MMBT3416LT3G Tech Specifications

MMBT3416LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 75MHz
Base Part Number MMBT3416
Number of Elements 1
Power Dissipation 300mW
Gain Bandwidth Product 75MHz
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Base Voltage (VCBO) 4V
hFE Min 75
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 2mA 4.5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 50mA
Collector Emitter Saturation Voltage 300mV
Emitter Base Voltage (VEBO) 4V
Height 1.11mm
Width 2.64mm
RoHS Status ROHS3 Compliant
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MMBT3416LT3G Documents

Download datasheets and manufacturer documentation for MMBT3416LT3G

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