MMBT4126LT3G Tech Specifications

MMBT4126LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Power - Max 225mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage -400mV
Emitter Base Voltage (VEBO) 4V
Height 1.11mm
Width 2.64mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 225mW
Terminal Form GULL WING
Frequency 250MHz
Base Part Number MMBT4126
Number of Elements 1
Power Dissipation 300mW
Gain Bandwidth Product 250MHz
Transistor Type PNP
Max Collector Current 200mA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 25V
hFE Min 120
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
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MMBT4126LT3G Documents

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