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MMBT6429LT1 Tech Specifications

MMBT6429LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Obsolete
ECCN Code EAR99
Max Power Dissipation 225mW
Frequency 700MHz
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 700MHz
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Saturation Voltage 600mV
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Cut Tape (CT)
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 50V
Current Rating 200mA
Base Part Number MMBT6429
Number of Elements 1
Power Dissipation 300mW
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 45V
Collector Base Voltage (VCBO) 55V
hFE Min 500
RoHS Status Non-RoHS Compliant
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MMBT6429LT1 Documents

Download datasheets and manufacturer documentation for MMBT6429LT1

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