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MMBT8099LT1G Tech Specifications

MMBT8099LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 150MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 6V
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 80V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
Base Part Number MMBT8099
Number of Elements 1
Power Dissipation 225mW
Gain Bandwidth Product 150MHz
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 80V
hFE Min 100
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MMBT8099LT1G Documents

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