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MMDF2C03HDR2 Tech Specifications

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Current Rating 4.1A
Base Part Number MMDF2C03HD
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.1A 3A
Rise Time 18ns
Fall Time (Typ) 194 ns
Continuous Drain Current (ID) 3A
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 21A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 8
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 70m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 24V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 81 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 324 mJ
FET Feature Logic Level Gate
Lead Free Contains Lead
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