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MMDF2N02ER2G Tech Specifications

MOSFET NFET SO8D 25V 3.6A 100mOhm

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 25V
Terminal Form GULL WING
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 3.6A
Drain-source On Resistance-Max 0.1Ohm
Avalanche Energy Rating (Eas) 245 mJ
FET Feature Logic Level Gate
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 532pF @ 16V
Rise Time 17ns
Turn-Off Delay Time 27 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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