MMDF3N04HDR2G Tech Specifications

MOSFET 2N-CH 40V 3.4A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 3A
Base Part Number MMDF3N04HD
Qualification Status Not Qualified
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 80m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 32V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 3A
Drain Current-Max (Abs) (ID) 3.4A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 96 pF
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.39W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.4A
Rise Time 15ns
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
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