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MPS651RLRA Tech Specifications

MPS651RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 240
Current Rating 2A
Base Part Number MPS651
JESD-30 Code O-PBCY-T3
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 75MHz
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Transition Frequency 75MHz
Max Breakdown Voltage 60V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.95
Voltage - Rated DC 60V
Terminal Position BOTTOM
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Polarity PNP
Transistor Application AMPLIFIER
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
hFE Min 75
Lead Free Contains Lead
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MPS651RLRA Documents

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