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MPS6560G Tech Specifications

MPS6560G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 60MHz
Pin Count 3
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 60MHz
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 25V
Terminal Position BOTTOM
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 25V
hFE Min 35
Lead Free Lead Free
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MPS6560G Documents

Download datasheets and manufacturer documentation for MPS6560G

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