MPSA13RLRAG Tech Specifications

MPSA13RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 30V
Terminal Position BOTTOM
Current Rating 500mA
Base Part Number MPSA13
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Transition Frequency 125MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
hFE Min 5000
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity NPN
Power Dissipation 1.5W
Transistor Type NPN - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.5V
Frequency - Transition 125MHz
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 500mA
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
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MPSA13RLRAG Documents

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