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MPSA56RLRMG Tech Specifications

MPSA56RLRMG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC -80V
Terminal Position BOTTOM
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 50MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 4V
Height 6.35mm
Width 25.4mm
REACH SVHC Unknown
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
Base Part Number MPSA56
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 50MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 80V
hFE Min 100
Length 6.35mm
Radiation Hardening No
RoHS Status RoHS Compliant
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MPSA56RLRMG Documents

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